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产品介绍
MX700KGD 系列芯片动静态筛选测试系统是一款对裸芯片进行自动化筛选测试的设备,主要应用于SiC MOS或IGBT芯片的测试。系统主要由测试系统、自动化装备以及 测试针卡组成,能够进行芯片标称电流电压的测试,以筛选评估芯片完整的数据表现。
机构介绍
探针卡介绍
测试站的升降机构带动芯片载台升降,直至探针卡的的探针接触芯片为止,探针卡的 压力室密封,自动校准芯片的高度。
产品规格表
动态测试技术参数
测试类型 |
测量参数 |
测试条件 |
|
turn off &turn on |
tdoff tf tff tZ Eoff VCEmax VCE IC dvCE/dt diC/dt |
tdon tr ton diC/dt Eon VCE IC1 IC2 ICmax |
VCC:50-1500V;IC:10-1000A VGE _on:0.5-20V;VGE_off:0.5-20V tswoff:1-100μs(tp:1-1000μs) |
FWD Recovery |
RM trr Qrr Erec VRM dlrf/dt dlrr/dt Pfrd(max) |
VCC:50-1500V;IC:10-1000A VGE_on:0.5-20V;VGE_off:0.5-20V tswoff:1-100μs (tp:7-1000 μs) |
|
Short circuit |
VCEmax ICmax VGEmax (during short circuit state not at turn on or turn off) Ic off diC/dt on diC/dt off |
VCC:50-1500V;ISCmax:2000A VGE_on:0.5-20V;VGE_off:0.5-20V tp:1-20μs |
静态测试技术参数
测试项 |
量程 |
分辨率和精度 |
测试条件 |
IGES |
0.1nA -10μA |
IGE measurement accuracy &resolution: 0.1nA-99999nA:±1%±1nA,0.01nA;999.99nA-9.9999μA:±1%±5nA,0.1nA VGE force accuracy &resolution: 0.000V-9.999V:±0.3%±3mV,1mV,9.999V-99.99V:±0.3%±30mV,10mV |
VGE:OV-±100V VCE:0V tp:1ms-15 |
ICES |
1nA-5mA |
ICE measurement accuracy &resolution: 1nA-999.99nA:±1%±10nA,0.01nA;999.99nA-999.99μA:±1%±20nA,0.1nA 999.99μA-5mA:±1%±100nA,0.1nA VCE force accuracy &resolution: VCE max 2kV: 0.000V-9.999V:±0.3%±3mV,1mV;9.999V-99.99V:±0.3%±30mV,10mV 99.99V-999.9V:±0.3%±300mV,100mV;1.000KV-2.000KV:±0.3%±3V,1V |
VCE:OV-2KV VGE:O-±30V tp:10ms-1s |
VCES |
200V-2000V |
VCE measurement accuracy &resolution: VCE max 2.0kV: 0-9999V:±0.5%±2mV,0.3mV;9.999V-9999V:±0.5%±20mV,3mV 99.99V-999.9V:±0.5%±200mV,30mV;1.000KV-2.000KV:±0.5%±2V300mV ICE force accuracy &resolution: 1nA-999.99nA:±1%±10nA,0.01nA;999.99nA-999.99μA:±1%±20nA,0.1nA 999.99μA-5mA:±1%±100nA,0.1nA |
ICE:1μA-10mA VGE:0V tp:10ms-1s |
VGEth |
0V-10V |
VGE measurement accuracy &resolution: 0-999.99mV:±0.2%±0.1mV,0.03mV;999.99mV-9.9999V:±0.2%±1mV,0.3mV ICE force accuracy &resolution: 999.9μA-9.999mA:±0.3%±3μA,1μA;9.999mA-99.99mA:±0.3%±30μA,0.01mA 99.99mA-999.9mA:±0.3%±300μA,0.1mA |
ICE:1mA-1A tp:1ms-100ms |
VCEsat |
0-10V |
VCE measurement accuracy&resolution: 0-999.99mV:±0.2%±0.1mV,0.03mV;999.99mV-9.9999V:±0.2%±1mV0.3mV ICE &VGE force accuracy &resolution: 999.9mA-9.999A:±0.3%±3mA,1mA;9.999A-65.00A:±0.3%±30mA,0.01A 65.00A-200.00A:±0.5%±30mA,0.01A VGE max:30.000V(Ice<200A) 0-999.99mV:±0.2%±0.1mV,0.mV;999.99mV-9.9999V:±0.2%±1mV,1mV 9.9999V-30.000V:±0.2%±10mV,10mV |
VGE:0V-20V ICE:1A-200A tp:0.3ms-1ms |
VF |
OV-10V |
VEC measurement accuracy &resolution: 0-999.99mV:±0.2%±0.1mV,0.03mV;999.99mV-9.9999V:±0.2%±1mV,0.3mV ICE&VGE force accuracy &resolution: 999.9mA-9.999A:±0.3%±3mA,1mA;9.999A-65.00A:±0.3%±30mA,0.01A 65.00A-200.00A:±0.5%±30mA,0.01A VGE max:30V 0-999.99mV:±0.2%±0.1mV,0.mV;999.99mV-9.9999V:±0.2%±1mV,1mV 9.9999V-30V:±0.2%±10mV,10mV |
VGE:O-±30V IEC:1-200A tp:0.3ms-1ms |
Kelvin Contact |
0-480 ohm |
R<10ohm =PASS R>10ohm =FAIL |
IF=25mA V=0-12V |
产品特点
测试类型全覆盖,可根据客户需求进行测试功能的配置,实现芯片的外观检测、高温 或常温下动静态测试等;